Silicon carbide, SiC,is produced by heating `SiO_(2)` and C to high temperature according to the equation: `SiO_(2)(g) + 3C(s) r

Silicon carbide, SiC,is produced by heating `SiO_(2)` and C to high temperature according to the equation:
`SiO_(2)(g) + 3C(s) rArr SiC(s) + 2CO(g)`
How many grams of SiC could be formed by reacting 2.00g of `SiO_(2)` and 2.00g of C? [Si=28]
A. 1.33
B. 2.26
C. 3.59
D. 4

Silicon carbide, SiC,is produced by heating `SiO_(2)` and C to high temperature according to the equation: `SiO_(2)(g) + 3C(s) rArr SiC(s) + 2CO(g)` H

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