The adjoining diagram shows the biasing of an npn-transistor in common emitter configuration used in an amplifer. The design of the transistor is such that `98%` of the charge carries passing through the emitter reach the collector. If base current changes from `50 muA` to `100muA`, then the corresponding change in the voltage across the load resistance `R_(L)` will be
A. 0.25 V
B. 0.5 V
C. 24.5 V
D. 49.0 V