i. The positive terminal of the external voltage is connected to the cathode (n-side) and negative terminal to the anode (p-side) across the diode.
ii. In case of reverse bias the width of the depletion region increases and the p-n junction behaves like a high resistance.
iii. Practically no current flows through it with an increase in the reverse bias voltage. However, a very small leakage current does flow through the junction which is of the order of a few micro amperes, (µA).
iv. When the reverse bias voltage applied to a diode is increased to sufficiently large value, it causes the p-n junction to overheat. The overheating of the junction results in a sudden rise in the current through the junction. This is because covalent bonds break and a large number of carries are available for conduction. The diode thus no longer behaves like a diode. This effect is called the avalanche breakdown.
v. The reverse biased characteristic of a diode is shown in figure.
