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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength 

(a) 4000 nm 

(b) 6000 nm 

(c) 4000 A 

(d) 6000 A

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1 Answer

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Best answer

The correct option is (c) 4000 A.

Explanation:

Band gap = 2.5 eV

The wavelength corresponding to 2.5 eV

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