A `Si` and a `Ge` diode has identical physical dimensions. The band gap in `Si` is larger than that in `Ge`. An indentical reverse bias is applied across the diodes.
A. The reverse current in `Ge` is larger than that in `Si`
B. The reverse current in `Si` is larger than that in `Ge`
C. The reverse current is identical in the two diodes
D. The relative magnitude of the reverse currents cannot be determined from the given data only.
