Data : VBB = 2 V,
VCC = 10 V,
RB = 100 kΩ,
RL = 1 kΩ,
βdc = 200.
Since it is a silicon transistor, the emitter-base barrier potential, V = 0.7 V.
The voltage across the base resistor is
VBB – VBE = 2 – 0.7 = 1.3 V
Therefore, the base current,
IB = \(\cfrac{V_{BB}−V_{BE}}{R_B}\) = \(\cfrac{1.3}{10^5}\) = 1.3 x 10-5 = 13 μA
The collector current,
IC = βIB = 200 × 1.3 × 10-5 = 2.6 × 10-3 A = 2.6mA