In a p–n junction diode, the current I can be expressed as
I = I0 \(exp(\frac{eV}{2k_{BT}}-1)\)
where I0 is reverse saturation current, V is applied voltage for forward bias positive and reverse bias negative. I is the current through diode.
kB is the Boltzmann constant (8.6 x 105 eV/k) and T is the absolute temperature. If for a given diode I0 = 5 x 10-12 A and T = 300 k, then