Question

In a p–n junction diode, the current I can be expressed as

I = I₀ \(exp(\frac{eV}{2k_{BT}}-1)\)

where I₀ is reverse saturation current, V is applied voltage for forward bias positive and reverse bias negative. I is the current through diode.

k_B is the Boltzmann constant (8.6 x 10⁵ eV/k) and T is the absolute temperature. If for a given diode I₀ = 5 x 10^-12 A and T = 300 k, then

Answer 1

(i) 0.629 A, 

(ii) 2.97 A, 

(iii) 0.336Ω