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It will be correct to say that,

(1) A lightly doped diode has a thin deplection layer and a higher breakdown voltage.

(2) A heavily doped diode has a thin deplection layer and a lower breakdown voltage

(3) A lightly doped diode has a wide deplection layer and a lower breakdown voltage

(4) A heavily doped diode has wide deplection layer and a higher breakdown voltage

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(2) A heavily doped diode has a thin deplection layer and a lower breakdown voltage

The width of the deplection layer, as well as the barrier potential across the junction, both decrease with an increase in the extent of doping, of the p and n sides, of the p–n junction diode.

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