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Define the following terms in regard to a transistor:

(a) Current gain

(b) Resistance gain

(c) Voltage gain

(d) Power gain

(e) Transistor conductance

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(a) Current gain (a): Current amplification factor ‘a’ is defined as a ratio of small change in the collector current to the small change in the emitter current at constant collector voltage.

Thus, a = \(\frac{\delta I_e}{\delta I_e}\) with Ec constant

(b) Resistance gain: The resistance gain of a transisor is defined as the ratio of collector-base internal resistance to the emitter-base internal resistance. Thus

Resistance gain = \(\frac{R_0}{R_i}\)

(c) Voltage gain: The collector circuit, being reverse biased, has very high internal resistance. This permits a high load resistance R, to be inserted in the collector circuit, without affecting the output current and this is the basis of voltage amplification in a transistor.

For the sake of explanation, let us consider a p-n-p common base junction transistor having a current gain a. Let an input signal voltage be fed to the emitter-base circuit having the low input.

Emitter Current, Ie\(\frac{V_i}{R_i}\)

Emitter Current

voltage gain

(d) Power gain: It is defined as the ratio of the output power to input power.

Power gain = \(\frac{\text {Output power }}{\text {Input power}}\)

\(\frac{I_e \times R_e}{I_e \times R_i}\)

= a2 x Resistance gain

(e) Transistor conductance: Transistor conductance is defined as the ratio of change in collector current to change in base emitter voltage.

gm\(\frac{\bigtriangleup I_e}{\bigtriangleup V_{bc}}\)

The quantity gm has units of conductance and is called the transfer conductance or transconductance of the transistor. The transconductance of a transistor depends upon the geometry, doping levels and biasing of the transistor.

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