Question

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of a n-type semiconductor.

Reason (R): In a p-type semiconductor \(\eta_e >> \eta_h\) while in a n-type semiconductor \(\eta_e >> \eta_h\).

Select the correct answer from the codes (A), (B), (C) and (D) as given below.

(A) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion (A)

(B) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of Assertion (A)

(C) Assertion (A) is true, but Reason (R) is false

(D) Assertion (A) is false and Reason (R) is also false

Answer 1

Correct option is : (C) Assertion (A) is true, but Reason (R) is false

Assertion (A): True : A  p-n junction cannot be formed just by joining p-type and n-type semiconductors physically due to lack of diffusion and formation of a depletion region.

Reason (R): False : In a p-type semiconductor \(\eta_e << \eta_h \) while in a n-type semiconductor \(\eta_h << \eta_e\) also electron and hole concentrations do not justify why a p-n junction cannot form this way.