p-n junction formation
p-n junction is formed either when a p-type semiconductor is grown in n-type or n-type is grown in p-type semiconductor.
The p-n junction is formed due to diffusion of charge carriers.
The two main process in p-n junction formation are
(1) Diffusion of charge carriers
(2) Drifting of charge Carriers

Full wave Rectifier:
As diode has unique property that it allow the current in one direction and offer large (ideally infinite) resistance in other direction. This property makes suitable to use diode in a rectifier circuit.
The schematic diagram of a full wave centre tap rectifier is shown in the figure (a).
(a)
(b)

(C)

Consider the input voltage to A with respect to the centre tap at any instant is positive then at that instant, voltage at B will be negative and vice-versa.
During the positive half-cycle of the input voltage sine wave, the diode D1 is forward-biased and diode D2 is reverse-biased, and the current flows in the direction shown in the figure. During the negative half-cycle, the diode D2 is forward-biased and diode D1 is reverse-biased. Hence, during this time also, a current flows through RL in the same direction as in the previous half-cycle. Thus, the current flows (in the same direction) through RL during the positive as well as the negative half-cycles of the input ac voltage. Hence, the dc voltage shape across R, is as shown in figure (c). This process is known as full-wave rectification.