Correct option: (1) Higher conductivity
Explanation:
For the silicon semiconductor, Mobility of electrons = µe = 1350 cm2 V–1 sec–1
Mobility of holes = µn = 480 cm2 V–1 sec–1
Conductivity of electrons = σ = n x q x µe
Conductivity of holes = σ = n x q x µn
Now, since dopant concentration is same,
Concentration of electrons (n) = concentration of holes (p)
Conductivity of n–type sample is more than p–type sample.