Correct option: (3) 1 µm
Explanation:
Let E be electric field inside depletion layer due to junction potential, V, across it. x is thickness of depletion layer. Given
F = Force experienced by electron inside depletion layer
= 0.112×10–12 N = |e| E
![](https://www.sarthaks.com/?qa=blob&qa_blobid=14279875346371085955)
The current in junction diode; in forward bias is zero is applied p.d is less than or equal to junction potential.
![](https://www.sarthaks.com/?qa=blob&qa_blobid=9962724529897147494)