(a) The three segments of n-p-n transistor are emitter, base and collector.
(i) Emitter: The function of emitter is to emit the majority carriers which are electrons in the case of n-p-n transistor. It is moderate in size and heavily doped.
(ii) Base: The function of base is to provide proper interaction between emitter and collector. It is then and lightly doped
(iii) Collector: the function of collector is to collect the majority carries. It is large in size and moderately doped.
(b) Circuit diagram of an n-p-n transistor in CE configuration: The CE configuration of transistor is when grounded emitter is kept as a common terminal. Base is input terminal and collector is output terminal.
Here, Is is base current; VBE is base–emitter voltage; Ie is emitter current; VCE is collector emitter voltage, and IC is the collector current. Here, B, E and C corresponds to base, emitter and collector, respectively. The output characteristics of CE configuration represents variation of collector current IC with respect to the collector–emitter voltage VCE keeping base current Ib fixed.
To get the output characteristics of an n-p-n transistor in CE configuration, we need to carry out the following steps:
• Adjust a suitable constant value of base current, Ib.
• Apply various values of collector–emitter voltage VCE and note that the corresponding values of collector current IC.
• Repeat the above step for various constant base currents.
• Plot a graph between collector–emitter voltage VCE and collector current IC.
• The current obtained are called output characteristics.