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Assertion (A) : The energy gap between the valance band and conduction band is greater in silicon than in germanium. 

Reason (R) : Thermal energy produces fewer minority carriers in silicon than in germanium.

(a) Both A and R are true and R is the correct explanation of A 

(b) Both A and R are true but R is NOT the correct explanation of A 

(c) A is true but R is false 

(d) A is false and R is also false

1 Answer

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Best answer

Option : (D) 

Mathematically, 

The number of electron-hole pairs in the intrinsic semiconductor is given by :

Now, 

Since in silicon the number of electron- hole pairs is less than that in germanium, 

The energy gap Eg in silicon is more than that in Ge.

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