(i). The barrier potential of a semi- conductor increases with rise in temperature.
The barrier potential (VB)of a semi-conductor is directly proportional to temperature in kelvin(T).
The relation between VB and T K in terms of the hole concentration on either side of the junction is given by :
VB = \(\frac{K_BT}{q}log_e(P_p/p_n)\)
Where KB = Boltzmann constant,
Pp = hole concentration in P-side
Pn = hole concentration in n- side.
(ii). LED stands for light emitting diode. It is a heavily doped p-n junction diode which under forward bias emits spontaneous radiation, due to recombination of minority carriers on either side of the junction with majority carriers there.
I -V characteristics of LED :
![](https://www.sarthaks.com/?qa=blob&qa_blobid=11646294864609597728)
The following materials are used in making LEDs whose light falls in the visible region :
(a) Gallium- phosphide(Gap)- giving red or green light
(b) Gallium- arsenide-phosphide (GaAsp) - giving red or yellow light.
LEDs are better than conventional bulb as the torch because LED is handy and light. It gives intense light and consumes less power.