Question

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p - n junction are

(a) diffusion in forward biased, drift in reverse bias

(b) drift in forward biased, drift in reverse biased

(c) diffusion in both forward and reverse bias

(d) drift in both forward and reverse bias

Answer 1

Answer is : (a) diffusion in forward biased, drift in reverse bias

In p n - junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carrier takes place across the junction when reverse biased.