Since energy gap between impurity levels and conduction band `(=40meV)`, is much smaller than the energy gap of pure semiconductor between valeance band and conduction band `(~~1 eV)`, hence the impurity levels are donor levels and impurity added has valence five. Thus the doped semiconductor is of n-type
or `T=(40meV)/k=(40xx10^(-3)eV)/(8.62xx10^(-5)eV//K)=464K`