Correct Answer - Option 2 : Both A and R are individually true but R is
not the correct explanation of A
ASSERTION EXPLANATION:
In semiconductors, holes are due to the absence of electrons.
In semiconductors, the excited electron moves from the valence band to the conduction band.
This creates a free electron in the conduction band and a hole in the valence band.
The electrons therefore have better mobility as they have gained excitation energy and are further away from the region of influence of the nucleus.
The holes are under the influence of nucleic forces and also have low excitation energy, therefore less mobility. E.g.-In intrinsic silicon, at temperature 300 K; Electron mobility = 1500 cm2/(V∙s), Hole mobility = 475 cm2/(V∙s)
REASON EXPLANATION-
In the semiconductor, free charge carriers are electrons and electron holes (electron-hole pairs).
Electrons and holes are created by the excitation of electrons from the valence band to the conduction band.
An electron-hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.
It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. Energy for the excitation can be obtained in different ways.
1. Thermal Excitation
2. Optical Excitation
3. Excitation by Ionizing Radiation
So both statements are correct but (R) is not the correct explanation of (A).