(1) Higher conductivity
For the silicon semiconductor,
Mobility of electrons = μe = 1350 cm2 V-1 sec-1
Mobility of holes = μn = 480 cm2 V-1 sec-1
Conductivity of electrons = σ = p x q x μe
Conductivity of holes = σ = p x q x μn
Now, since dopant concentration is same,
Concentration of electrons (n) = concentration of holes (p)
Conductivity of n–type sample is more than p–type sample.