A pure siliconn sample has ne = 1.3 x 1016 m-3. The material is doped with
(a) 1019 atoms m-3 of phosporous
(b) 2 x 1019 atoms m-3 of boron
one by one. What is ratio of resistivity of doped sample in (a) and (b) due to majority charge carriers?
Given:
Mobility of electrons = 0.125 m2V-1s-1, Mobility of holes = 0.0426 m2V-1s-1 .
(1) 1
(2) 2
(3) 1/2
(4) 2/3